INDIRECT, QUASI-DIRECT, AND DIRECT OPTICAL-TRANSITIONS IN THE PSEUDOMORPHIC (4X4)-MONOLAYER SI-GE STRAINED-LAYER SUPERLATTICE ON SI(001)

被引:73
作者
PEOPLE, R
JACKSON, SA
机构
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 02期
关键词
D O I
10.1103/PhysRevB.36.1310
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1310 / 1313
页数:4
相关论文
共 18 条
[1]   ELECTRONIC STATES IN SEMICONDUCTOR HETEROSTRUCTURES [J].
BASTARD, G ;
BRUM, JA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1625-1644
[2]   GE-SI LAYERED STRUCTURES - ARTIFICIAL CRYSTALS AND COMPLEX CELL ORDERED SUPERLATTICES [J].
BEVK, J ;
MANNAERTS, JP ;
FELDMAN, LC ;
DAVIDSON, BA ;
OURMAZD, A .
APPLIED PHYSICS LETTERS, 1986, 49 (05) :286-288
[3]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[4]   FOURIER EXPANSION FOR ELECTRONIC ENERGY BANDS IN SILICON AND GERMANIUM [J].
DRESSELHAUS, G ;
DRESSELHAUS, MS .
PHYSICAL REVIEW, 1967, 160 (03) :649-+
[5]   THEORY OF DIRECT OPTICAL-TRANSITIONS IN AN OPTICAL INDIRECT SEMICONDUCTOR WITH A SUPERLATTICE STRUCTURE [J].
GNUTZMAN.U ;
CLAUSECK.K .
APPLIED PHYSICS, 1974, 3 (01) :9-14
[6]   THEORY OF CYCLOTRON RESONANCE IN STRAINED SILICON CRYSTALS [J].
HASEGAWA, H .
PHYSICAL REVIEW, 1963, 129 (03) :1029-&
[7]   QUANTUM RESONANCES IN VALENCE BANDS OF GERMANIUM .2. CYCLOTRON RESONANCES IN UNIAXIALLY STRESSED CRYSTALS [J].
HENSEL, JC ;
SUZUKI, K .
PHYSICAL REVIEW B, 1974, 9 (10) :4219-4257
[8]  
Jackson S. A., 1986, MATERIALS RES SOC S, V56, P365, DOI [10.1557/PROC-56-365, DOI 10.1557/PROC-56-365]
[9]   ELECTRON-PHONON INTERACTION AT A SILICON SURFACE [J].
KELLY, MJ ;
HANKE, W .
PHYSICAL REVIEW B, 1981, 23 (02) :924-927
[10]   MEASUREMENT OF THE BAND-GAP OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].
LANG, DV ;
PEOPLE, R ;
BEAN, JC ;
SERGENT, AM .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1333-1335