Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons

被引：72

作者：

Tartakovskii, AI ^{[1
]}

Makhonin, MN

Sellers, IR

Cahill, J

Andreev, AD

Whittaker, DM

Wells, JPR

Fox, AM

Mowbray, DJ

Skolnick, MS

Groom, KM

Steer, MJ

Liu, HY

Hopkinson, M

机构：

[1] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

[3] Univ Surrey, Adv Technol Inst, Surrey, England

[4] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 19期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevB.70.193303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The fine structure splitting of bright exciton states is measured for a range of thermally annealed InGaAs quantum dot (QD) samples with differing degrees of In/Ga intermixing and also for a dot-in-a-well (DWELL) structure. Magnitudes of the fine structure splitting are determined in polarization-resolved differential transmission experiments from measurements of the period of quantum beats observed in QD exciton dynamics. The splitting is found to decrease in structures with weaker strain: both for In/Ga intermixed QD's and also in dots surrounded by strain-reducing layers (DWELL's). Our findings pave the way to the achievement of entangled two photon sources based on emission from individual QD's, currently prevented since the fine structure splitting is larger than the radiative linewidth.

引用

页码：1 / 4

页数：4

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