III-V-N compounds for infrared applications

被引：24

作者：

Salzman, J ^{[1
]}

Temkin, H

机构：

[1] Technion Israel Inst Technol, Inst Solid State, Dept Elect Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Ctr Microelect, IL-32000 Haifa, Israel

[3] Texas Tech Univ, Dept Elect Engn, Lubbock, TX 79409 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 50卷 / 1-3期

关键词：

infrared applications; metalorganic molecular beam epitaxy; bowing parameter;

D O I：

10.1016/S0921-5107(97)00153-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

III-V alloys containing nitrogen and As or P are potential candidate materials for infrared applications, The most studied material in this system is GaAs1-xNx. After reviewing the early experiments, and some theoretical predictions, we describe growth experiments by metalorganic molecular beam epitaxy, in which highly crystalline, single phase material was obtained for x less than or equal to 0.18. Room temperature photoluminescence was measured for layers with x=0.73%. The GaAsN alloys seem to exhibit a composition dependent bowing parameter. (C) 1997 Elsevier Science S.A.

引用

页码：148 / 152

页数：5

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