Epitaxial growth and characterization of GaSxSe1-x layered compound semiconductor by molecular beam epitaxy

被引：13

作者：

Budiman, M ^{[1
]}

Okamoto, T ^{[1
]}

Yamada, A ^{[1
]}

Konagai, M ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,RES CTR QUANTUM EFFECT ELECT,MEGURO KU,TOKYO 152,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

关键词：

GaSe; GaSxSe1-x; heterostructure; layered materials; III-VI compound semiconductors;

D O I：

10.1016/S0169-4332(97)80135-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

C-axis inclined GaSxSe1-x films were successfully grown on misoriented (001)GaAs substrate. The growth temperature ranged from 500-540 degrees C, which is similar with the case of GaSe/GaAs system. In the Raman spectra, the shift of one-mode and hue-mode phonon spectra were observed, Strong photoluminescence spectra of GaSxSe1-x for various compositions of the film were also observed and the energy shift of the peak is consistant with the shift of the bandgap energy.

引用

页码：518 / 522

页数：5

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