VAN-DER-WAALS EPITAXY ON HYDROGEN-TERMINATED SI(111) SURFACES AND INVESTIGATION OF ITS GROWTH-MECHANISM BY ATOMIC-FORCE MICROSCOPE

被引：31

作者：

UENO, K

SAKURAI, M

KOMA, A

机构：

[1] Department of Chemistry, University of Tokyo, Bunkyo-ku, Tokyo, 113

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80125-V

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

NH4F treatment of a Si(lll) substrate gives a very flat and chemically inactive surface because of the regular termination of each active dangling bond by a hydrogen atom. On this inactive surface. layered semiconductor GaSe and molecular crystal C-60 grow through weak Van der Waals interaction. As a result their epitaxial films can be grown with their own lattice structures in spite of the large difference in their lattice constants from the substrate. Atomic force microscope (AFM) analysis of the GaSe thin film revealed many triangular spiral structures. indicating screw dislocation growth mechanism. In contrast, AFM observation of the C-60 film showed that it grows in the island growth mode, and each island has a two-dimensional dendritic shape.

引用

页码：1180 / 1185

页数：6

共 23 条

[1] HETEROEPITAXIAL GROWTH OF LAYERED GASE FILMS ON GAAS(001) SURFACES [J].