Effect of growth temperature on ZnO thin film deposited on SiO2 substrate

被引：55

作者：

Kim, KS ^{[1
]}

Kim, HW ^{[1
]}

Lee, CM ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 98卷 / 02期

关键词：

MOCVD; ZnO; low temperature; thin film;

D O I：

10.1016/S0921-5107(02)00754-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the effect of deposition temperature on the growth and structural quality of ZnO films on SiO2 substrate in the range of 100-250 degreesC using the metal organic chemical vapor deposition (MOCVD) technique. We revealed that highly c-axis oriented ZnO thin films were obtained at the temperature of 200-250 degreesC and the ZnO thin film was successfully deposited at the lower temperature of 100-150 degreesC. The c-axis orientation of the film improved and the grain size increased by increasing growth temperature. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：135 / 139

页数：5

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