Optically pumped lasing at 353 nm using non-polar a-plane AlGaN multiple quantum wells over r-plane sapphire

被引：11

作者：

Chen, CQ ^{[1
]}

Shatalov, M ^{[1
]}

Kuokstis, E ^{[1
]}

Adivarahan, V ^{[1
]}

Gaevski, M ^{[1
]}

Rai, S ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 8B期

关键词：

a-plane; non-polar; AlGaN MQWs; lasing; optical gain;

D O I：

10.1143/JJAP.43.L1099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an optically-pumped alternative nitride-based laser with room-temperature emission at 353 nm. The active region comprised of non-polar a-plane Al0.04Ga0.96N/Al0.08Ga0.92N multiple quantum wells whereas the lasing cavity consisted of Al0.15Ga0.85N clad and Al0.10Ga0.85N waveguide layers and naturally cleaved facet mirrors. The layers were grown over r-plane sapphire substrates by metalorganic chemical vapor deposition technique. A room temperature lasing threshold for N-2-laser photoexcitation of 110kW/cm(2) and a modal optical gain of 215cm(-1) was measured at the peak emission wavelength.

引用

页码：L1099 / L1102

页数：4

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