Growth of CeO2 films on glass substrates using electron-beam-assisted evaporation

被引：15

作者：

Sakamoto, N

Inoue, T

Kato, K

机构：

[1] Iwaki Meisei Univ, Dept Elect & Comp Sci, Iwaki, Fukushima 9708551, Japan

[2] Fukushima Technol Ctr, Mat Dev Dept, Koriyama, Fukushima 9630215, Japan

来源：

CRYSTAL GROWTH & DESIGN | 2003年 / 3卷 / 02期

关键词：

D O I：

10.1021/cg025604o

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The growth of CeO2 films on glass substrates using electron-beam-assisted evaporation is investigated. Experiments with varying growth temperatures (room temperature to 750 degreesC) reveal that orientation controlled CeO2 films are obtained. Electron-beam-assisted evaporation enhances preferential orientation and enlarges the grain size of the films.

引用

页码：115 / 116

页数：2

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