Electrical characteristics of Schottky contacts on GaN and Al0.11Ga0.89N

被引：50

作者：

Arulkumaran, S ^{[1
]}

Egawa, T

Zhao, GY

Ishikawa, H

Jimbo, T

Umeno, M

机构：

[1] Nagoya Inst Technol, Res Ctr Micro Struct Devices, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Nagoya Inst Technol, Venture Business Lab, Showa Ku, Nagoya, Aichi 4668555, Japan

[3] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2000年 / 39卷 / 4B期

关键词：

GaN; AlGaN; Schottky diode; barrier height; Fermi-level pinning;

D O I：

10.1143/JJAP.39.L351

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of Ag, Ti, An, Pd and Ni Schottky contacts on GaN and Al0.11Ga0.89N grown by metalorganic chemical vapour deposition (MOCVD) on sapphire substrates have been investigated. Al0.11Ga0.89N Schottky barrier height values are bit higher than the values of GaN contacts except Ti Schottky contacts. Fermi-level pinning has been observed for both GaN and Al0.11Ga0.89N Schottky contacts. The pinning degree of GaN and Al0.11Ga0.89N are much less than GaAs, Si and GaP, but both of them may be similar to CdS.

引用

页码：L351 / L353

页数：3

共 12 条

[1] Growth and applications of Group III nitrides
Ambacher, O
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (20) : 2653 - 2710
[2] Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator-semiconductor interfaces with low interface state density
Arulkumaran, S
Egawa, T
Ishikawa, H
Jimbo, T
Umeno, M
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (06) : 809 - 811
[3] Simple interpretation of metal/wurtzite-GaN barrier heights
Bermudez, VM
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) : 1170 - 1171
[4] Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire
Egawa, T
Ishikawa, H
Umeno, M
Jimbo, T
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (01) : 121 - 123
[5] METAL CONTACTS TO GALLIUM NITRIDE
FORESI, JS
MOUSTAKAS, TD
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (22) : 2859 - 2861
[6] KAMPEN TU, 1996, J NITRIDE SEMICOND R, V41, P1
[7] Ni and Ni silicide Schottky contacts on n-GaN
Liu, QZ
Yu, LS
Deng, F
Lau, SS
Redwing, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (02) : 881 - 886
[8] A review of the metal-GaN contact technology
Liu, QZ
Lau, SS
[J]. SOLID-STATE ELECTRONICS, 1998, 42 (05) : 677 - 691
[9] Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction
Qiao, D
Yu, LS
Lau, SS
Redwing, JM
Lin, JY
Jiang, HX
[J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (02) : 801 - 804
[10] REZAUL M, 1997, SOLID STATE ELECT, V41, P27

← 1 2 →