Enhanced shot noise in resonant tunneling: Theory and experiment

被引：155

作者：

Iannaccone, G ^{[1
]}

Lombardi, G ^{[1
]}

Macucci, M ^{[1
]}

Pellegrini, B ^{[1
]}

机构：

[1] Univ Pisa, Dept Ingn Informaz Elect Informat & Telecomun, I-56126 Pisa, Italy

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.80.1054

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that shot noise in a resonant-tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to "full" shot noise. We provide experimental results showing a Fano factor of up to 6.6, and show that it is a dramatic effect caused by electron-electron interaction through the Coulomb force, enhanced by the particular shape of the density of states in the well. We also present numerical results from the proposed theory, which are in agreement with the experiment, demonstrating that the model accounts for physics relevant to the phenomenon.

引用

页码：1054 / 1057

页数：4

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