Hysteretic behavior of the charge injection in single silicon nanoparticles

被引:17
作者
Diesinger, H
Mélin, T
Deresmes, D
Stiévenard, D
Baron, T
机构
[1] Inst Elect Microelect & Nanotechnol, CNRS, UMR 8520, F-59652 Villeneuve Dascq, France
[2] CEA Grenoble, Leti DTS, Lab Technol Microelect, CNRS,UMR 5129, F-38054 Grenoble, France
关键词
D O I
10.1063/1.1808889
中图分类号
O59 [应用物理学];
学科分类号
摘要
Charge injection in individual silicon nanoparticles has been investigated by electric force microscopy (EFM). Stored charges injected from the EFM tip have been counted using a quantitative method. Injection kinetics reveals the setting-up of an equilibrium regime. Equilibrium charge-voltage characteristics are analyzed, and display an overall linear behavior corresponding to successive tunneling through the nonequivalent tip-nanoparticle and nanoparticle-substrate oxide barriers. A hysteretic behavior is observed in the equilibrium charge-voltage characteristics, and attributed to a secondary charge injection process associated with the nanoparticle oxide surface. (C) 2004 American Institute of Physics.
引用
收藏
页码:3546 / 3548
页数:3
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