Modeling the dynamics of Si wafer bonding during annealing

被引：11

作者：

Han, WH ^{[1
]}

Yu, JZ ^{[1
]}

Wang, QM ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 07期

关键词：

D O I：

10.1063/1.1308069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The bonding behavior of silicon wafers depends on activation energy for the formation of siloxane bonds. In this article we developed a quantitative model on the dynamics of silicon wafer bonding during annealing. Based on this model, a significant difference in the bonding behaviors is compared quantitatively between the native oxide bonding interface and the thermal oxide bonding interface. The results indicate that the bonding strength of the native oxide interface increases with temperature much more rapidly than that of the thermal oxide interface. (C) 2000 American Institute of Physics. [S0021-8979(00)05520-1].

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页码：4404 / 4406

页数：3

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