Design and synthesis of new photoresist materials for ArF lithography

被引：17

作者：

Choi, SJ ^{[1
]}

Kim, HW ^{[1
]}

Woo, SG ^{[1
]}

Moon, JT ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Ctr, Proc Dev Team, Yongin City, Kyungki Do, South Korea

来源：

ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2 | 2000年 / 3999卷

关键词：

ArF single-layer resist; VEMA (vinyl ether-maleic anhydride); dry etch resistance;

D O I：

10.1117/12.388333

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new class of photoresist matrix polymers based on vinyl ether-maleic anhydride (VEMA) alternating copolymers were developed for ArF single-layer lithography. These polymers were synthesized by copolymerization of alkyl vinyl ether-maleic anhydride alternating copolymers and acrylate derivatives with bulky alicyclic acid-labile protecting groups. They showed a good controllability of polymerization and high transmittance. Also, these resists showed a good adhesion to the substrate, high dry-etching resistance against CF, mixture gas (1.02 times the etching rate of DUV resist) and high selectivity to silicon oxide etching. Using an ArF excimer laser exposure system with 0.6 NA, 120 Mn L/S patterns have been resolved under conventional illumination.

引用

页码：54 / 61

页数：2

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