Nanomeasurement and fractal analysis of PZT ferroelectric thin films by atomic force microscopy

被引:49
作者
Jeng, YR [1 ]
Tsai, PC
Fang, TH
机构
[1] Natl Chung Cheng Univ, Dept Mech Engn, Chiayi 621, Taiwan
[2] So Taiwan Univ Technol, Dept Mech Engn, Tainan 710, Taiwan
关键词
radio frequency magnetron sputtering; PZT ferroelectric thin film; atomic force microscopy; rapid thermal annealing; fractal analysis;
D O I
10.1016/S0167-9317(03)00052-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, the radio frequency (RF) magnetron sputtering process is used to generate a PZT ferroelectric thin film on a silicon substrate. The surface characteristic of this lead zirconate titanate film Pb(ZrxTi1-x)O-3 is then investigated by means of an atomic force microscopy (AFM) method. The relationship between the temperature of the rapid thermal annealing (RTA) process and the characteristics of the resulting microstructure is also examined. Various aspects of the surface are investigated, including its roughness, its microstructure and its fractal characteristics. The results demonstrate that higher annealing temperatures reduce surface roughness and promote increased grain size due to the phase transformations which are induced within the microstructure. The fractal analysis reveals that the fractal dimension, D-s, increases for larger AFM scan images, and that the value of D-s falls within the range 2.10-2.50 depending upon the scanned length/area and is calculated by the structure function. Finally, it is determined that the phase transformations which occur at higher annealing temperatures result in higher fractal dimensions. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:406 / 415
页数:10
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