Structural and electrical characteristics of oriented Pb(Zr0.52Ti0.48)O3 ferroelectric thin films deposited on diamond substrates by a simple sol-gel process

We firstly report the successful deposition of highly oriented Pb(Zr0.52Ti0.48)O-3 (PZT) ferroelectric thin films on diamond substrates by a simple sol-gel process. The PZT thin films exhibited good surface morphological, structural and electrical characteristics. The electrical measurements were conducted on PZT films in metal-ferroelectric-metal (MFM) capacitor configuration. The typical remanent polarization and coercive electric field values were 5.1 mu C/cm(2) and 70.0 kV/cm, respectively, at an applied electric field of 300 kV/cm. The low leakage current of 10(-8) A/cm(2) was found at an applied electric field of 120 kV/cm. (C) 1999 Elsevier Science B.V. All rights reserved.