Fabrication and electrical characteristics of polymer-based Schottky diode

被引：71

作者：

Liang, GR ^{[1
]}

Cui, TH ^{[1
]}

Varahramyan, K ^{[1
]}

机构：

[1] Louisiana Tech Univ, Inst Micromfg, Ruston, LA 71272 USA

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 04期

关键词：

polymer Schottky diode; spin-coating; PEDT/PSS; I-V characteristics; Norde function;

D O I：

10.1016/S0038-1101(02)00324-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal/polymer Schottky diodes have been fabricated using spin-coated poly(3,4-ethylenedioxythiophene) (PEDT) doped with poly(styrenesulfonate) (PSS) as the p-type semiconductor and aluminum as the metal. The current-voltage and capacitance-voltage characteristics have been studied at room temperature. The breakdown voltage and rectification ratio of the Al/PEDT Schottky diode are about 5.5 V and 1.3 x 10(4), respectively. A modified Norde function combined with conventional forward I-V method was used to extract the parameters including barrier height, rectification ratio, ideality factor, as well as the series resistance. This new method allows extraction of device characteristics from measured I-V curve that deviates from ideal I-V curve caused by series resistance. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：691 / 694

页数：4

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