SEMICONDUCTIVE POLYMER-BASED SCHOTTKY DIODE

被引:77
作者
TURUT, A [1 ]
KOLELI, F [1 ]
机构
[1] ATATURK UNIV,FAC SCI & ART,DEPT CHEM,ERZURUM,TURKEY
关键词
D O I
10.1063/1.351822
中图分类号
O59 [应用物理学];
学科分类号
摘要
Polythiophene is easily obtained electrochemically on a Au surface in an acetonitrile/0.25 M LiClO4 solution. On the basis of this knowledge, we prepared a metal-semiconductor-metal Schottky diode, in which Au and Al were used as metals and freshly prepared polythiophene as a semiconductor. Current-voltage and capacity-voltage characteristics of this diode have been obtained under atmospheric conditions.
引用
收藏
页码:818 / 819
页数:2
相关论文
共 11 条
[1]   TEMPERATURE-DEPENDENCE OF IV AND C-V CHARACTERISTICS OF NI/N-CDF2 SCHOTTKY-BARRIER TYPE DIODES [J].
COVA, P ;
SINGH, A .
SOLID-STATE ELECTRONICS, 1990, 33 (01) :11-19
[3]   METAL SEMICONDUCTIVE POLYMER SCHOTTKY DEVICE [J].
GUPTA, R ;
MISRA, SCK ;
MALHOTRA, BD ;
BELADAKERE, NN ;
CHANDRA, S .
APPLIED PHYSICS LETTERS, 1991, 58 (01) :51-52
[4]   SOME NEW ELECTROCHEMICAL RESULTS ON THE PROPERTIES OF CONDUCTING POLYMERS [J].
HEINZE, J ;
MORTENSEN, J ;
HINKELMANN, K .
SYNTHETIC METALS, 1987, 21 (02) :209-214
[5]  
Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[6]   CRYSTAL-STRUCTURE OF DRAWN POLYTHIOPHENE FILM [J].
SATOH, M ;
YAMASAKI, H ;
AOKI, S ;
YOSHINO, K .
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1988, 159 :289-295
[7]   CHARACTERIZATION OF INTERFACE STATES AT NI/NCDF2 SCHOTTKY-BARRIER TYPE DIODES AND THE EFFECT OF CDF2 SURFACE PREPARATION [J].
SINGH, A .
SOLID-STATE ELECTRONICS, 1985, 28 (03) :223-232
[8]   RECTIFYING METAL-POLYMER CONTACTS FORMED BY MELT PROCESSING [J].
SUNDBERG, M ;
GUSTAFSSON, G ;
INGANAS, O .
APPLIED PHYSICS LETTERS, 1990, 57 (07) :733-734
[9]  
SZE SM, 1981, PHYSICS SEMICONDUCTO
[10]   METAL-POLYMER SCHOTTKY BARRIERS ON CAST FILMS OF SOLUBLE POLY(3-ALKYLTHIOPHENES) [J].
TOMOZAWA, H ;
BRAUN, D ;
PHILLIPS, S ;
HEEGER, AJ ;
KROEMER, H .
SYNTHETIC METALS, 1987, 22 (01) :63-69