CHARACTERIZATION OF INTERFACE STATES AT NI/NCDF2 SCHOTTKY-BARRIER TYPE DIODES AND THE EFFECT OF CDF2 SURFACE PREPARATION

被引：181

作者：

SINGH, A

机构：

[1] Univ de Oriente, Dep de Fisica,, Cumana, Venez, Univ de Oriente, Dep de Fisica, Cumana, Venez

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 03期

关键词：

Acknowledgements-This work was supported by Consejo de Investigacibn de Universidad de Oriente; under the grant CI-05-00007/80. The author would like to thank Lit. A. Perez Herrera and Lit. P. Cova for their help in performing the experiments and Br. J. S. Rodriguez for the help in the data analysis; and also acknowledges several helpful conversations with Dr. M. C. Robinson and Dr. L. Lockwood;

D O I：

10.1016/0038-1101(85)90002-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

36

引用

收藏

页码：223 / 232

页数：10

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