Use of a helicon-wave excited plasma for aluminum-doped ZnO thin-film sputtering

被引：62

作者：

Yamaya, K ^{[1
]}

Yamaki, Y ^{[1
]}

Nakanishi, H ^{[1
]}

Chichibu, S ^{[1
]}

机构：

[1] Sci Univ Tokyo, Fac Sci & Technol, Chiba 278, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 02期

关键词：

D O I：

10.1063/1.120707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Successful sputtering deposition of aluminum-doped zinc oxide (ZnO:Al) thin films was carried out using the helicon-wave excited plasma (HWP). The films deposited on soda-lime glass substrates exhibited a dominant [0001]-oriented growth with a small full-width at half maximum (0.32 deg) of the (0002) x-ray diffraction peak. The film deposited at 300 degrees C showed a resistivity of 5 x 10(-4) Omega cm without any additional annealings. High optical transmittance greater than 80% was achieved in the visible spectral wavelengths. Similar to the success of the laser ablation technique, the HWP-sputtering method is expected to be developed as one of the versatile techniques for the preparation of semiconductor thin films. (C) 1998 American Institute of Physics.

引用

页码：235 / 237

页数：3

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