Heteroepitaxial Si/ZnO Hierarchical Nanostructures for Future Optoelectronic Devices

被引:16
作者
Devika, Mudusu [1 ]
Reddy, Nandanapalli Koteeswara [1 ]
Pevzner, Alexander [1 ]
Patolsky, Fernando [1 ]
机构
[1] Tel Aviv Univ, Raymond & Beverly Sackler Fac Exact Sci, Sch Chem, IL-69978 Tel Aviv, Israel
基金
以色列科学基金会;
关键词
core-shell structures; hetero-epitaxial growth; nanostructures; optoelectronic devices; semiconductors; ENHANCED FIELD-EMISSION; CORE-SHELL; SILICON NANOWIRES; CARBON NANOTUBES; SOLAR-CELLS; GROWTH; HETEROSTRUCTURES; ZNS; NANOPARTICLES; FABRICATION;
D O I
10.1002/cphc.201000021
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The synthesis of highly-ordered ultra-dense heteroepitaxial Si/ZnO hierarchical nanostructures by a simple and cost-effective approach is demonstrated. We also show, based on the same approach, the synthesis of ZnO nanoparticle-decorated Si nanowire cores and Si/ZnO conformal core-shell hetero-nanostructures. The as-synthesized ZnO nanobranches on Si nanowire cores exhibit an epitaxial relationship as (111)Si/(100) ZnO. Excellent control over the composition, dimensions, and density of ZnO branches on Si cores has been achieved. Thus, in future, this family of well-controlled, high-quality Si/ZnO hierarchical hetero-nanostructures could play a role as multifunctional candidates in the fabrication of optoelectronic devices, particularly for the development of a new generation of solar-cell devices.
引用
收藏
页码:809 / 814
页数:6
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