Room temperature dislocation plasticity in silicon

被引:115
作者
Minor, AM
Lilleodden, ET
Jin, M
Stach, EA
Chrzan, DC
Morris, JW
机构
[1] Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[3] Lawrence Berkeley Lab, Natl Ctr Electron Microscopy, Berkeley, CA 94720 USA
关键词
D O I
10.1080/14786430412331315680
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present direct observations of room temperature dislocation plasticity in single crystalline silicon. Previous studies have shown that phase transformation and fracture are the relevant mechanisms of deformation in silicon. In contrast, using in-situ nanoindentation in a transmission electron microscope we find dislocation nucleation and metal-like flow. The results of finite-element modelling suggest that the presence of free surfaces in our unique sample geometry leads to preferential surface nucleation of dislocations and the suppression of phase transformation.
引用
收藏
页码:323 / 330
页数:8
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