Analysis-of the field-electron energy distribution from amorphous carbon-nitride films

被引:7
作者
Chen, J [1 ]
Huang, NY
Liu, XW
Deng, SZ
Xu, NS
机构
[1] Zhongshan Univ, State Key Lab Ultrafast Laser Spect Study, Guangzhou 510275, Peoples R China
[2] Zhongshan Univ, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 01期
关键词
D O I
10.1116/1.1527599
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The study of field-electron energy distribution (FEED) from amorphous carbon-nitride (a-CN) films is, essential to understanding the mechanism of field emission from this promising material. In this work, the FEED from an a-CN film was obtained by measuring the distribution of electrons field-emitted from individual emitting sites. The FEED are recorded at different electrical fields. We found that the peak shifts as well as the half-widths increase with increasing applied fields. Furthermore, multipeak features are observed at the low-energy side of the spectra. The FEED data are fitted by using a theoretical energy distribution of free-electron approximation. We assumed that the small peaks originate from the interband states of a-CN film. We propose that although the emission mainly originates from current injection into the conduction band of a-CN film, the electrons may also be emitted from interband states. (C) 2003 American Vacuum Society.
引用
收藏
页码:567 / 570
页数:4
相关论文
共 21 条
[1]  
Amaratunga GAJ, 1996, APPL PHYS LETT, V68, P2529, DOI 10.1063/1.116173
[2]  
BAZIAN A, 1997, INT J REFRACT MET H, V15, P3
[3]  
BRODIE I, 1992, ADV ELECTRON EL PHYS, V83, P1
[4]   Study of field electron emission phenomenon associated with N-doped amorphous diamond thin films [J].
Chen, J ;
Wei, AX ;
Deng, SZ ;
Lu, Y ;
Zheng, XG ;
Chen, DH ;
Mo, D ;
Peng, SQ ;
Xu, NS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02) :697-699
[5]   A study of field electron emission from thin amorphous-carbon-nitride films [J].
Chen, J ;
Xu, NS ;
Wang, EG ;
Deng, SZ ;
Chen, DH ;
Wei, AX .
CHINESE PHYSICS LETTERS, 1998, 15 (07) :539-541
[6]   Fabrication of amorphous-carbon-nitride field emitters [J].
Chi, EJ ;
Shim, JY ;
Baik, HK ;
Lee, SM .
APPLIED PHYSICS LETTERS, 1997, 71 (03) :324-326
[7]   Structural, electronic and optical properties of carbon nitride [J].
Cohen, ML .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1996, 209 (1-2) :1-4
[8]   NOVEL SYNTHETIC ROUTES TO CARBON-NITROGEN THIN-FILMS [J].
KOUVETAKIS, J ;
BANDARI, A ;
TODD, M ;
WILKENS, B ;
CAVE, N .
CHEMISTRY OF MATERIALS, 1994, 6 (06) :811-814
[9]  
KUMAR N, 1995, SOLID STATE TECHNO B, V13, P427
[10]   INFRARED-ABSORPTION AND NUCLEAR-MAGNETIC-RESONANCE STUDIES OF CARBON NITRIDE THIN-FILMS PREPARED BY REACTIVE MAGNETRON SPUTTERING [J].
LI, D ;
CHUNG, YW ;
YANG, ST ;
WONG, MS ;
ADIBI, F ;
SPROUL, WD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1994, 12 (04) :1470-1473