Single-electron transport in a one-dimensional channel by high-frequency surface acoustic waves

被引：228

作者：

Talyanskii, VI ^{[1
]}

Shilton, JM ^{[1
]}

Pepper, M ^{[1
]}

Smith, CG ^{[1
]}

Ford, CJB ^{[1
]}

Linfield, EH ^{[1
]}

Ritchie, DA ^{[1
]}

Jones, GAC ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.56.15180

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a detailed experimental study of the quantized acoustoelectric current induced by a surface acoustic wave in a one-dimensional channel defined in a GaAs-AlxGa1-xAs heterostructure by a split gate. The current measured as a function of the gate voltage demonstrates quantized plateaus in units of I = ef where e is the electron charge and f is the surface acoustic wave frequency, the effect first observed by Shilton et al. The quantization is due to trapping of electrons in the moving potential wells induced by the surface acoustic wave, with the number of electrons in each well controlled by electron-electron repulsion. The experimental results demonstrate that acoustic charge transport in a one-dimensional channel may be a viable means of producing a standard of electrical current.

引用

页码：15180 / 15184

页数：5

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