Electrical characterization of conducting polypyrrole by THz time-domain spectroscopy

被引：64

作者：

Jeon, TI ^{[1
]}

Grischkowsky, D

Mukherjee, AK

Menon, R

机构：

[1] Oklahoma State Univ, Sch Elect & Comp Engn, Stillwater, OK 74078 USA

[2] Oklahoma State Univ, Ctr Laser & Photon Res, Stillwater, OK 74078 USA

[3] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

[4] Korea Maritime Univ, Dept Elect Engn, Pusan, South Korea

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 16期

关键词：

D O I：

10.1063/1.1319188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using an optoelectronic THz beam system for THz time-domain spectroscopy (THz TDS), we have measured the absorption and index of refraction of a conducting polypyrrole film from low frequencies to 2.5 THz. From these measurements, the dc conductivity of 215/(Omega cm) and the complex conductance were obtained over this frequency range. All of the results were well fit by Drude theory, which gives a carrier scattering time of only 12.6 fs, less than 1/10 that of the semiconductors, thereby illustrating the disorder and low mobility of the polymer. (C) 2000 American Institute of Physics. [S0003-6951(00)05242-6].

引用

页码：2452 / 2454

页数：3

共 11 条

[1] FAR-INFRARED TIME-DOMAIN SPECTROSCOPY WITH TERAHERTZ BEAMS OF DIELECTRICS AND SEMICONDUCTORS [J].

GRISCHKOWSKY, D ;

KEIDING, S ;

VANEXTER, M ;

FATTINGER, C .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1990, 7 (10) :2006-2015

[2] Observation of a Cole-Davidson type complex conductivity in the limit of very low carrier densities in doped silicon [J].

Jeon, TI ;

Grischkowsky, D .

APPLIED PHYSICS LETTERS, 1998, 72 (18) :2259-2261

[3] Nature of conduction in doped silicon [J].

Jeon, TI ;

Grischkowsky, D .

PHYSICAL REVIEW LETTERS, 1997, 78 (06) :1106-1109

[4] Characterization of optically dense, doped semiconductors by reflection THz time domain spectroscopy [J].

Jeon, TI ;

Grischkowsky, D .

APPLIED PHYSICS LETTERS, 1998, 72 (23) :3032-3034

[5] ELECTRICAL CHARACTERIZATION TO 4 THZ OF N-TYPE AND P-TYPE GAAS USING THZ TIME-DOMAIN SPECTROSCOPY [J].

KATZENELLENBOGEN, N ;

GRISCHKOWSKY, D .

APPLIED PHYSICS LETTERS, 1992, 61 (07) :840-842

[6] REFLECTANCE OF CONDUCTING POLYPYRROLE - OBSERVATION OF THE METAL-INSULATOR-TRANSITION DRIVEN BY DISORDER [J].

LEE, KH ;

MENON, R ;

YOON, CO ;

HEEGER, AJ .

PHYSICAL REVIEW B, 1995, 52 (07) :4779-4787

[7]

MENON R, 1994, SYNTHETIC MET, V64, P53

[8]

MENON R, 1998, HDB CONDUCTING POLYM

[9] CARRIER DYNAMICS OF ELECTRONS AND HOLES IN MODERATELY DOPED SILICON [J].

VANEXTER, M ;

GRISCHKOWSKY, D .

PHYSICAL REVIEW B, 1990, 41 (17) :12140-12149

[10] OPTICAL AND ELECTRONIC-PROPERTIES OF DOPED SILICON FROM 0.1 TO 2 THZ [J].

VANEXTER, M ;

GRISCHKOWSKY, D .

APPLIED PHYSICS LETTERS, 1990, 56 (17) :1694-1696

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