Characterization of optically dense, doped semiconductors by reflection THz time domain spectroscopy

被引：140

作者：

Jeon, TI ^{[1
]}

Grischkowsky, D

机构：

[1] Oklahoma State Univ, Sch Elect & Comp Engn, Stillwater, OK 74078 USA

[2] Oklahoma State Univ, Ctr Laser & Photon Res, Stillwater, OK 74078 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 23期

关键词：

D O I：

10.1063/1.121531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present reflection THz-time domain spectroscopy measurements of the complex conductivity of Ir-type, 0.038 Omega cm GaAs and n-type, 0.22 Omega cm Si wafers. These measurements clearly demonstrate the efficacy of the reflection technique on highly conductive, optically dense samples and approach the precision of TNz-TDS transmission measurements. Because the THz-bandwidth. reflection measurements extend beyond the carrier collision frequency, we obtain direct measures of the mobility and the carrier number density. (C) 1998 American Institute of Physics.

引用

页码：3032 / 3034

页数：3

共 9 条

[1]

Born M., 1986, PRINCIPLES OPTICS

[2] FAR-INFRARED TIME-DOMAIN SPECTROSCOPY WITH TERAHERTZ BEAMS OF DIELECTRICS AND SEMICONDUCTORS [J].

GRISCHKOWSKY, D ;

KEIDING, S ;

VANEXTER, M ;

FATTINGER, C .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1990, 7 (10) :2006-2015

[3] Transient terahertz reflection spectroscopy of undoped InSb from 0.1 to 1.1 THz [J].

Howells, SC ;

Schlie, LA .

APPLIED PHYSICS LETTERS, 1996, 69 (04) :550-552

[4] Nature of conduction in doped silicon [J].

Jeon, TI ;

Grischkowsky, D .

PHYSICAL REVIEW LETTERS, 1997, 78 (06) :1106-1109

[5] ELECTRICAL CHARACTERIZATION TO 4 THZ OF N-TYPE AND P-TYPE GAAS USING THZ TIME-DOMAIN SPECTROSCOPY [J].

KATZENELLENBOGEN, N ;

GRISCHKOWSKY, D .

APPLIED PHYSICS LETTERS, 1992, 61 (07) :840-842

[6] Noncontact semiconductor wafer characterization with the terahertz Hall effect [J].

Mittleman, DM ;

Cunningham, J ;

Nuss, MC ;

Geva, M .

APPLIED PHYSICS LETTERS, 1997, 71 (01) :16-18

[7]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[8] CARRIER DYNAMICS OF ELECTRONS AND HOLES IN MODERATELY DOPED SILICON [J].

VANEXTER, M ;

GRISCHKOWSKY, D .

PHYSICAL REVIEW B, 1990, 41 (17) :12140-12149

[9] OPTICAL AND ELECTRONIC-PROPERTIES OF DOPED SILICON FROM 0.1 TO 2 THZ [J].

VANEXTER, M ;

GRISCHKOWSKY, D .

APPLIED PHYSICS LETTERS, 1990, 56 (17) :1694-1696

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