Characterization of optically dense, doped semiconductors by reflection THz time domain spectroscopy

被引:140
作者
Jeon, TI [1 ]
Grischkowsky, D
机构
[1] Oklahoma State Univ, Sch Elect & Comp Engn, Stillwater, OK 74078 USA
[2] Oklahoma State Univ, Ctr Laser & Photon Res, Stillwater, OK 74078 USA
关键词
D O I
10.1063/1.121531
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present reflection THz-time domain spectroscopy measurements of the complex conductivity of Ir-type, 0.038 Omega cm GaAs and n-type, 0.22 Omega cm Si wafers. These measurements clearly demonstrate the efficacy of the reflection technique on highly conductive, optically dense samples and approach the precision of TNz-TDS transmission measurements. Because the THz-bandwidth. reflection measurements extend beyond the carrier collision frequency, we obtain direct measures of the mobility and the carrier number density. (C) 1998 American Institute of Physics.
引用
收藏
页码:3032 / 3034
页数:3
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