Characterization of optically dense, doped semiconductors by reflection THz time domain spectroscopy

被引：142

作者：

Jeon, TI ^{[1
]}

Grischkowsky, D

机构：

[1] Oklahoma State Univ, Sch Elect & Comp Engn, Stillwater, OK 74078 USA

[2] Oklahoma State Univ, Ctr Laser & Photon Res, Stillwater, OK 74078 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 23期

关键词：

D O I：

10.1063/1.121531

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present reflection THz-time domain spectroscopy measurements of the complex conductivity of Ir-type, 0.038 Omega cm GaAs and n-type, 0.22 Omega cm Si wafers. These measurements clearly demonstrate the efficacy of the reflection technique on highly conductive, optically dense samples and approach the precision of TNz-TDS transmission measurements. Because the THz-bandwidth. reflection measurements extend beyond the carrier collision frequency, we obtain direct measures of the mobility and the carrier number density. (C) 1998 American Institute of Physics.

引用

页码：3032 / 3034

页数：3

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