Black Phosphorus Photodetector for Multispectral, High-Resolution Imaging

被引:668
作者
Engel, Michael [1 ]
Steiner, Mathias [1 ,2 ]
Avouris, Phaedon [1 ]
机构
[1] IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] IBM Res Brazil, BR-22290240 Rio De Janeiro, RJ, Brazil
关键词
Black phosphorus; photodetector; imaging; near-infrared; optoelectronics; FIELD-EFFECT TRANSISTORS;
D O I
10.1021/nl502928y
中图分类号
O6 [化学];
学科分类号
070301 [无机化学];
摘要
Black phosphorus is a layered semiconductor that is intensely researched in view of applications in optoelectronics. In this letter, we investigate a multilayer black phosphorus photodetector that is capable of acquiring high-contrast (V > 0.9) images both in the visible (lambda(VIS) = 532 nm) as well as in the infrared (lambda(IR) = 1550 nm) spectral regime. In a first step, by using photocurrent microscopy, we map the active area of the device and we characterize responsivity and gain. In a second step, by deploying the black phosphorus device as a point-like detector in a confocal microsope setup, we acquire diffraction-limited optical images with submicron resolution. The results demonstrate the usefulness of black phosphorus as an optoelectronic material for hyperspectral imaging applications.
引用
收藏
页码:6414 / 6417
页数:4
相关论文
共 18 条
[1]
Abbe E., 1873, Archiv f ur Mikroskopische Anatomie, V9, P413, DOI DOI 10.1007/BF02956173
[2]
Effect of van der Waals interactions on the structural and elastic properties of black phosphorus [J].
Appalakondaiah, S. ;
Vaitheeswaran, G. ;
Lebegue, S. ;
Christensen, N. E. ;
Svane, A. .
PHYSICAL REVIEW B, 2012, 86 (03)
[3]
Beer A., 1852, Annalen der Physik Chimie, V162, P78, DOI [10.1002/andp.18521620505, DOI 10.1002/ANDP.18521620505, 10.1002/andp.v162:5, DOI 10.1002/ANDP.V162:5]
[4]
Two new modifications of phosphorus. [J].
Bridgman, PW .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1914, 36 :1344-1363
[5]
Fast and Broadband Photoresponse of Few-Layer Black Phosphorus Field-Effect Transistors [J].
Buscema, Michele ;
Groenendijk, Dirk J. ;
Blanter, Sofya I. ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
NANO LETTERS, 2014, 14 (06) :3347-3352
[6]
Isolation and characterization of few-layer black phosphorus [J].
Castellanos-Gomez, Andres ;
Vicarelli, Leonardo ;
Prada, Elsa ;
Island, Joshua O. ;
Narasimha-Acharya, K. L. ;
Blanter, Sofya I. ;
Groenendijk, Dirk J. ;
Buscema, Michele ;
Steele, Gary A. ;
Alvarez, J. V. ;
Zandbergen, Henny W. ;
Palacios, J. J. ;
van der Zant, Herre S. J. .
2D MATERIALS, 2014, 1 (02)
[7]
Polarized photocurrent response in black phosphorus field-effect transistors [J].
Hong, Tu ;
Chamlagain, Bhim ;
Lin, Wenzhi ;
Chuang, Hsun-Jen ;
Pan, Minghu ;
Zhou, Zhixian ;
Xu, Ya-Qiong .
NANOSCALE, 2014, 6 (15) :8978-8983
[8]
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides [J].
Jariwala, Deep ;
Sangwan, Vinod K. ;
Lauhon, Lincoln J. ;
Marks, Tobin J. ;
Hersam, Mark C. .
ACS NANO, 2014, 8 (02) :1102-1120
[9]
THE ELECTRICAL PROPERTIES OF BLACK PHOSPHORUS [J].
KEYES, RW .
PHYSICAL REVIEW, 1953, 92 (03) :580-584
[10]
Electric field effect in ultrathin black phosphorus [J].
Koenig, Steven P. ;
Doganov, Rostislav A. ;
Schmidt, Hennrik ;
Castro Neto, A. H. ;
Oezyilmaz, Barbaros .
APPLIED PHYSICS LETTERS, 2014, 104 (10)