Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation

被引:21
作者
Poon, CH
Cho, BJ
Lu, YF
Bhat, M
See, A
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 119260, Singapore
[2] Natl Univ Singapore, Laser Micro Proc Lab, Singapore 119260, Singapore
[3] Chartered Semicond Mfg Ltd, Technol Dev Dept, Singapore 738406, Singapore
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 02期
关键词
D O I
10.1116/1.1547747
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Advantages of multiple-pulse laser annealing with a moderate energy fluence over a single-pulse annealing with a high energy fluence are demonstrated on them formation of shallow p(+)/n junction. When the silicon surface is preamorphized, the multiple-pulse laser annealing with a fluence adjusted to a value which can melt the amorphous layer but not crystal silicon shows that the successive pulses do not increase junction depth further but decrease sheet resistance significantly. Under this condition, the junction depth is still controlled by the depth of the preamorphized layer. However, when the laser fluence is high enough to melt the crystal silicon, the successive pulses result in the deepening of junction depth. This is attributed to the increase of surface roughness by the successive pulses, thereby increasing the total absorbed energy. (C) 2003 American Vacuum Society.
引用
收藏
页码:706 / 709
页数:4
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