Reduction of process-induced damage and improvement of imprint characteristics in SrBi2Ta2O9 capacitors by postmetallization annealing

被引:3
作者
Ashikaga, Kinya
Takaya, Koji
Kanehara, Takao
Yoshimaru, Masaki
Koiwa, Ichiro
机构
[1] Oki Elect Ind Co Ltd, Semicond Business Grp, Semicond R&D Div, Hachioji, Tokyo 1938550, Japan
[2] Kanto Gakuin Univ, Fac Engn, Dept Appl Mat & Life Sci, Kanazawa Ku, Yokohama, Kanagawa 2368501, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 02期
关键词
ferroelectric random access memory; SrBi2Ta2O9; imprint degradation; process-induced damage; postmetallization annealing;
D O I
10.1143/JJAP.46.695
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated the effect of process damage induced after capacitor etching procedures in the process of ferroelectric random access memory (FeRAM) fabrication for SrBi2Ta2O9 capacitors. We found that this damage was suppressed by postmetallization annealing (400 degrees C, 30 min in O-2) and that imprint characteristics were improved by the annealing, because active elements such as hydrogen and water induced during contact hole formation on tungsten plugs and first-metal formation are adsorbed effectively by the annealing before they penetrate into these capacitors.
引用
收藏
页码:695 / 697
页数:3
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