Valley-orbit splitting in doped nanocrystalline silicon:: k•p calculations

被引：22

作者：

Belyakov, Vladimir A. ^{[1
]}

Burdov, Vladimir A. ^{[1
]}

机构：

[1] Univ Nizhniy Novgorod, Dept Theoret Phys, Novgorod 603950, Russia

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.76.045335

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The valley-orbit splitting in silicon quantum dots with shallow donors has been theoretically studied. In particular, the chemical-shift calculation was carried out within the frames of k center dot p approximation for single- and many-donor cases. For both cases, the great value of the chemical shift has been obtained compared to its bulk value. Such increase of the chemical shift becomes possible due to the quantum confinement effect in a dot. It is shown for the single-donor case that the level splitting and chemical shift strongly depend on the dot radius and donor position inside the nanocrystal. In the many-donor case, the chemical shift is almost proportional to the number of donors.

引用

页数：12

共 36 条

[1] VALLEY-ORBIT INTERACTION IN SEMICONDUCTORS [J].

BALDERESCHI, A .

PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12) :4673-+

[2] ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS [J].

BASSANI, F ;

IADONISI, G ;

PREZIOSI, B .

REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (09) :1099-1210

[3] Donor states in modulation-doped Si/SiGe heterostructures [J].

Blom, A ;

Odnoblyudov, MA ;

Yassievich, IN ;

Chao, KA .

PHYSICAL REVIEW B, 2003, 68 (16)

[4] Poisson-Schrodinger and ab initio modeling of doped Si nanocrystals:: Reversal of the charge transfer between host and dopant atoms -: art. no. 045301 [J].

Blomquist, T ;

Kirczenow, G .

PHYSICAL REVIEW B, 2005, 71 (04)

[5] Electron and hole spectra of silicon quantum dots [J].

Burdov, VA .

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2002, 94 (02) :411-418

[6] First-principles study of n- and p-doped silicon nanoclusters -: art. no. 113303 [J].

Cantele, G ;

Degoli, E ;

Luppi, E ;

Magri, R ;

Ninno, D ;

Iadonisi, G ;

Ossicini, S .

PHYSICAL REVIEW B, 2005, 72 (11)

[7] Microscopic dielectric response functions in semiconductor quantum dots -: art. no. 236804 [J].

Cartoixà, X ;

Wang, LW .

PHYSICAL REVIEW LETTERS, 2005, 94 (23)

[8] Concept of dielectric constant for nanosized systems [J].

Delerue, C ;

Lannoo, M ;

Allan, G .

PHYSICAL REVIEW B, 2003, 68 (11)

[9]

Delerue C., 2004, NANOSTRUCTURES THEOR

[10] QUANTUM CONFINEMENT IN SI NANOCRYSTALS [J].

DELLEY, B ;

STEIGMEIER, EF .

PHYSICAL REVIEW B, 1993, 47 (03) :1397-1400

← 1 2 3 4 →