Self-forming InAs/GaP quantum dots by direct island growth

被引：36

作者：

Leon, R ^{[1
]}

Lobo, C

Chin, TP

Woodall, JM

Fafard, S

Ruvimov, S

Liliental-Weber, Z

Kalceff, MAS

机构：

[1] Australian Natl Univ, IAS, RSPhysSE, Canberra, ACT 0200, Australia

[2] Purdue Univ, Dept Elect & Comp Engn, W Lafayette, IN 47907 USA

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0C6, Canada

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[5] Univ Technol Sydney, Microstuct Anal Unit, Broadway, NSW 2007, Australia

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 11期

关键词：

D O I：

10.1063/1.121070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs/GaP semiconductor quantum dots (QDs) were spontaneously formed using direct island growth (Volmer-Weber) rather than Stranski-Krastanow (S-K) growth. Structural investigations of InAs/GaP QDs suggest kinetically limited growth and show a broad size distribution Photoluminescence and cathodoluminescence spectroscopy reveal large inhomogeneous broadening with the emission peak centering at 1.7 eV, Device applications exploiting broad optical emission in QDs are discussed. (C) 1998 American Institute of Physics.

引用

页码：1356 / 1358

页数：3

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