Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

被引：103

作者：

Ielmini, Daniele ^{[1
]}

Nardi, Federico

Cagli, Carlo

Lacaita, Andrea L.

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 04期

关键词：

Nonvolatile memory; reliability estimation; reliability modeling; resistive-switching memory (RRAM); OXIDATION; MECHANISM;

D O I：

10.1109/LED.2010.2040799

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NiO-based resistive-switching memory (RRAM) is a promising new technology for high-density nonvolatile storage. The main obstacles to practical application are the large and hardly scalable reset (programming) current and the reliability at high temperature. This letter studies temperature-accelerated data retention in RRAM cells from both experimental and theoretical standpoints, addressing the size/nature of the conductive filament and clarifying the tradeoff between data retention and reset current.

引用

页码：353 / 355

页数：3

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