Infrared reflectance characterization of GaSb epilayers on (001)GaAs substrates

被引：3

作者：

Engelbrecht, JAA ^{[1
]}

Botha, JR ^{[1
]}

机构：

[1] Univ Port Elizabeth, Dept Phys, ZA-6001 Port Elizabeth, South Africa

来源：

CONFERENCE ON PHOTO-RESPONSIVE MATERIALS, PROCEEDINGS | 2004年

关键词：

D O I：

10.1002/pssc.200404804

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

GaSb epilayers grown by organometallic vapour phase epitaxy (MOVPE) onto 2degrees off (100) GaAs substrates were characterized by infrared reflectance spectroscopy, using a new, modified oscillator formula. Dielectric parameters obtained for both layer and substrate respectively are presented in the range 200-1000 cm(-1). (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2349 / 2353

页数：5

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