Size-dependent output power saturation of vertical-cavity surface-emitting laser diodes

被引:21
作者
Wipiejewski, T
Peters, MG
Thibeault, BJ
Young, DB
Coldren, LA
机构
[1] Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara
[2] SDL, Inc., San Jose
关键词
D O I
10.1109/68.475761
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate efficient vertical-cavity surface-emitting laser diodes with high output power levels. Improved output power in these pillar-etched devices is achieved through a 60% lower thermal resistance by using a 15-mu m-thick An-plated heat spreading layer on the top surface with a size of 300 x 300 mu m(2). The maximum continous wave output power increases almost linearly with laser diameter, before it saturates at 42 mW for an unmounted Au-plated device of 64-mu m diameter. A simple analytical model describes the laser output characteristics and the size-dependent saturation behavior of the maximum output power.
引用
收藏
页码:10 / 12
页数:3
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