Extension of KrF lithography to sub-50 nm pattern formation

被引：17

作者：

Nakao, S ^{[1
]}

Itoh, J ^{[1
]}

Nakae, A ^{[1
]}

Kanai, I ^{[1
]}

Saitoh, T ^{[1
]}

Matsubara, H ^{[1
]}

Tsujita, K ^{[1
]}

Arimoto, I ^{[1
]}

Wakamiya, W ^{[1
]}

机构：

[1] Mitsubishi Elect Co, ULSI Dev Ctr, Itami, Hyogo 6648641, Japan

来源：

OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2 | 2000年 / 4000卷

关键词：

sub-50 nm isolated line pattern; phase edge type PSM; special resist; partial plasma ashing; low MEF;

D O I：

10.1117/12.389025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sub-50 nm isolated line pattern is successfully formed by KrF lithography with DOF larger than 0.5 mu m. This is performed by using a phase edge type phase shift mask, a special photo resist and a partial dry ashing process. Because all of these elemental techniques currently becomes mature, this method is one of promising candidates for sub-50 nm isolated line pattern formation. As a conclusion, we consider KrF lithography can be extended to sub-50 nm high speed logic node.

引用

页码：358 / 365

页数：8

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