Gap opening in topological-defect lattices in graphene

被引:23
作者
da Silva-Araujo, Joice [1 ]
Chacham, H. [1 ]
Nunes, R. W. [1 ]
机构
[1] Univ Fed Minas Gerais, ICEX, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
来源
PHYSICAL REVIEW B | 2010年 / 81卷 / 19期
关键词
ELECTRONIC-PROPERTIES; PSEUDOPOTENTIALS;
D O I
10.1103/PhysRevB.81.193405
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ab initio calculations indicate that topological-defect networks in graphene display the full variety of single-particle electronic structures, including Dirac-fermion null-gap semiconductors, as well as metallic and semiconducting systems of very low formation energies with respect to a pristine graphene sheet. Corrugation induced by the topological defects further reduces the energy and tends to reduce the density of states at the Fermi level, to widen the gaps, or even to lead to gap opening in some cases where the parent planar geometry is metallic.
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页数:4
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