Complex evolution of the electronic structure from polycrystalline to monocrystalline graphene: Generation of a new Dirac point

被引:30
作者
Araujo, Joice da Silva [1 ]
Nunes, R. W. [1 ]
机构
[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil
来源
PHYSICAL REVIEW B | 2010年 / 81卷 / 07期
关键词
GRAIN-BOUNDARY; GRAPHITE; PSEUDOPOTENTIALS; FILMS; STM;
D O I
10.1103/PhysRevB.81.073408
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
First principles calculations, employed to address the properties of polycrystalline graphene, indicate that the electronic structure of tilt grain boundaries in this system displays a rather complex evolution toward graphene bulk, as the tilt angle decreases, with the generation of a Dirac point, at the Fermi level, that lies not on the usual graphene Brillouin zone K point, and an anisotropic Dirac cone of low-energy excitations. Moreover, the usual K-point Dirac cone falls below the Fermi level, and rises toward it as the tilt angle decreases. Further, our calculations indicate that the grain-boundary formation energy behaves nonmonotonically with the tilt angle, due to a change in the spatial distribution and relative contributions of the bond-stretching and bond-bending deformations associated with the formation of the defect.
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页数:4
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