Rapid carrier relaxation in In0.4Ga0.6As/GaAs quantum dots characterized by differential transmission spectroscopy

被引:200
作者
Sosnowski, TS [1 ]
Norris, TB
Jiang, H
Singh, J
Kamath, K
Bhattacharya, P
机构
[1] Univ Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA
[3] Univ Michigan, Solid State Elect Lab, Ann Arbor, MI 48109 USA
来源
PHYSICAL REVIEW B | 1998年 / 57卷 / 16期
关键词
D O I
10.1103/PhysRevB.57.R9423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Carrier relaxation in self-organized In0.4Ga0.6As/GaAs quantum dots is investigated by time-resolved differential transmission measurements. The dots have a base dimension of around 14 nm and a height of 7 nm, leading to an average energy separation of the ground and first excited electronic states much greater than the LO-phonon energy, so the phonon-mediated electron relaxation is expected to be slow. Our measurements indicate that, even at low carrier densities (less than one electron-hole pair per dot), the electron and hole relaxation time constants are 5.2 and 0.6 ps, respectively; this indicates a lack of any "phonon bottleneck" and is consistent with a model of electrons scattering from holes which can relax rapidly via phonon emission. [S0163-1829(98)52716-6].
引用
收藏
页码:R9423 / R9426
页数:4
相关论文
共 20 条
[1]   QUANTUM-WELL LASERS GAIN, SPECTRA, DYNAMICS [J].
ARAKAWA, Y ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1887-1899
[2]  
BENSITY H, 1991, PHYS REV B, V44, P10945
[3]   ROLE OF STRAIN AND GROWTH-CONDITIONS ON THE GROWTH FRONT PROFILE OF INXGA1-XAS ON GAAS DURING THE PSEUDOMORPHIC GROWTH REGIME [J].
BERGER, PR ;
CHANG, K ;
BHATTACHARYA, P ;
SINGH, J ;
BAJAJ, KK .
APPLIED PHYSICS LETTERS, 1988, 53 (08) :684-686
[4]   PHONON-SCATTERING AND ENERGY RELAXATION IN 2-DIMENSIONAL, ONE-DIMENSIONAL, AND ZERO-DIMENSIONAL ELECTRON GASES [J].
BOCKELMANN, U ;
BASTARD, G .
PHYSICAL REVIEW B, 1990, 42 (14) :8947-8951
[5]   INAS QUANTUM DOTS IN A SINGLE-CRYSTAL GAAS MATRIX [J].
BRANDT, O ;
TAPFER, L ;
PLOOG, K ;
BIERWOLF, R ;
HOHENSTEIN, M ;
PHILLIPP, F ;
LAGE, H ;
HEBERLE, A .
PHYSICAL REVIEW B, 1991, 44 (15) :8043-8053
[6]  
EFROS AL, 1995, SOLID STATE COMMUN, V93, P281, DOI 10.1016/0038-1098(94)00780-2
[7]  
JIANG H, IN PRESS PHYSICA E
[8]   Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study [J].
Jiang, HT ;
Singh, J .
PHYSICAL REVIEW B, 1997, 56 (08) :4696-4701
[9]   Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers [J].
Kamath, K ;
Bhattacharya, P ;
Sosnowski, T ;
Norris, T ;
Phillips, J .
ELECTRONICS LETTERS, 1996, 32 (15) :1374-1375
[10]   Photoluminescence and time-resolved photoluminescence characteristics of InxGa((1-x))As/GaAs self-organized single- and multiple-layer quantum dot laser structures [J].
Kamath, K ;
Chervela, N ;
Linder, KK ;
Sosnowski, T ;
Jiang, HT ;
Norris, T ;
Singh, J ;
Bhattacharya, P .
APPLIED PHYSICS LETTERS, 1997, 71 (07) :927-929