Rapid carrier relaxation in In0.4Ga0.6As/GaAs quantum dots characterized by differential transmission spectroscopy

被引：200

作者：

Sosnowski, TS ^{[1
]}

Norris, TB

Jiang, H

Singh, J

Kamath, K

Bhattacharya, P

机构：

[1] Univ Michigan, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[3] Univ Michigan, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.57.R9423

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carrier relaxation in self-organized In0.4Ga0.6As/GaAs quantum dots is investigated by time-resolved differential transmission measurements. The dots have a base dimension of around 14 nm and a height of 7 nm, leading to an average energy separation of the ground and first excited electronic states much greater than the LO-phonon energy, so the phonon-mediated electron relaxation is expected to be slow. Our measurements indicate that, even at low carrier densities (less than one electron-hole pair per dot), the electron and hole relaxation time constants are 5.2 and 0.6 ps, respectively; this indicates a lack of any "phonon bottleneck" and is consistent with a model of electrons scattering from holes which can relax rapidly via phonon emission. [S0163-1829(98)52716-6].

引用

页码：R9423 / R9426

页数：4

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