Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas

We report a breakthrough for selective etching of GaAs over AlxGa1-xAs, x=0.2, layer with a high density plasma source. This result is particularly important for III-V devices such as heterojunction bipolar transistors (HBTs) or high electron mobility transistors (HEMTs). For example, fabrication of HBTs requires a process for selective etching of a GaAs contact layer while stopping on AlGaBs layer. Inductively coupled plasma (ICP) etching with BCl3/SF6/N-2/He chemistries showed extremely high selectivity of GaAs over AlGaAs (>200:1) and a photoresist (>10:1). This process also produced excellent sidewall passivation on GaAs with reasonably high rate (>1500 Angstrom /min.). Both scanning electron microscope and atomic force microscope data showed AlGaAs etch stop layer was quite smooth after processing. We found that He played a key role in enhancing selectivity and obtaining smooth AlGaAs surfaces. When used with resist masks, addition of N-2 into BCl3/SF6 plasma helped formation of passivation on the sidewall and maintained high anisotropy. An optimized condition with BCl3/SF6/N-2/He ICP plasmas showed excellent pattern transfer into GaAs with high rate, anisotropy, and selectivity. (C) 2000 American Vacuum Society. [S0734-2101(00)05804-8].