Ultrathin layers of rare earth oxides from Langmuir-Blodgett films

被引:16
作者
Schurr, M [1 ]
Hassmann, J [1 ]
Kugler, R [1 ]
Tomaschko, C [1 ]
Voit, H [1 ]
机构
[1] Univ Erlangen Nurnberg, Inst Phys, D-91058 Erlangen, Germany
关键词
ultrathin; oxides; films; Langmuir-Blodgett films;
D O I
10.1016/S0040-6090(97)00166-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ultrathin rare earth oxide films have been fabricated using Langmuir-Blodgett films of rare earth arachidates as precursors. Irradiation of these films with UV light and subsequent heating of the films (350 degrees C) result in oxide films exhibiting a smoothness comparable to that of the Si-wafers used as substrates (roughness R approximate to 0.3 MI). The film thickness can easily be adjusted via the number of Langmuir-Blodgett monolayers deposited onto the substrate. (C) 1997 Published by Elsevier Science S.A.
引用
收藏
页码:260 / 265
页数:6
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