Spectra of superbright blue and green InGaN/AlGaN/GaN light-emitting diodes

被引:8
作者
Kudryashov, VE [1 ]
Turkin, AN
Yunovich, AE
Zolina, KG
Nakamura, S
机构
[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia
[2] Nichia Chem Ind Ltd, Tokushima 774, Japan
关键词
D O I
10.1016/S0955-2219(97)00054-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Electroluminescence spectra of blue and green light-emitting diodes (LEDs) based on InxGa1-xN/ AlyGa1-yN/GaN heterostructures with a thin quantum well active layers were studied at currents J = 0.01-20 mA. Spectral maxima of blue LEDs are (h) over bar omega(max) = 2.58-2.75 eV, of green are (h) over bar omega(max) = 2.3-2.45 eV, depending on the In content in the active layer. The low and high energy tails of the spectra are exponential with the parameters E-0 = 42-50 meV and E-1 approximate to 1-1.3 kT, respectively. The spectra can be described taking into account quantum-size effects, impurities and fluctuations in active layers. An interference structure in spectra was detected. Light intensity depended on J linearly in the interval 1-20 mA. Efficiency of blue LEDs dropped at J <0.7 mA as I similar to J(4-5) (300 K). The green LEDs had no such dependence. Tunnel radiation spectra with maxima moving with the voltage were detected at low J. (C) 1997 Elsevier Science Limited.
引用
收藏
页码:2033 / 2037
页数:5
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