Models of electrode-dielectric interfaces in ferroelectric thin-film devices

被引:31
作者
Dawber, M [1 ]
Scott, JF [1 ]
机构
[1] Univ Cambridge, Dept Earth Sci, Ctr Ferro, Cambridge CB2 3EQ, England
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 11B期
关键词
space charge; screening; interfacial capacitance; ferroelectric;
D O I
10.1143/JJAP.41.6848
中图分类号
O59 [应用物理学];
学科分类号
摘要
We discuss electrode-dielectric interfaces in ferroelectric thin films and thin films that have high dielectric constants. We consider the charge on the electrodes in several cases, and focus on the effects that arise from this charge being distributed over a finite length (i.e. the Thomas-Fermi screening length). The effects differ for high kappa dielectrics, where a fraction of the applied potential now falls across the electrodes and not the film, and materials with a ferroelectric polarization where the screening of the field in the electrodes sets a scale for the depolarization field. The effects of space charge can be easily incorporated. We also discuss the manner in which high concentrations of oxygen vacancies near the interface arise via a combined grain-boundary and bulk diffusion process, and the effect this charge has on the characteristics of the interface (for example, the Schottky barrier height). [DOI: 10.1143/JJAP.41.6848]
引用
收藏
页码:6848 / 6851
页数:4
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