Evolution of InAs nanostructures grown by droplet epitaxy

被引：27

作者：

Zhao, C. ^{[1
]}

Chen, Y. H. ^{[1
]}

Xu, B. ^{[1
]}

Jin, P. ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 03期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2757151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet. When the flux exceeds a critical value, In droplets form, which act as nucleation centers for the formation of InAs rings. (C) 2007 American Institute of Physics.

引用

页数：3

共 20 条

[1]

Bimberg D., 1999, QUANTUM DOT HETEROST

[2] Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy - art. no. 071903 [J].

Chen, YH ;

Sun, J ;

Jin, P ;

Wang, ZG ;

Yang, Z .

APPLIED PHYSICS LETTERS, 2006, 88 (07)

[3] Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample [J].

da Silva, MJ ;

Quivy, AA ;

González-Borrero, PP ;

Marega, E .

JOURNAL OF CRYSTAL GROWTH, 2002, 236 (1-3) :41-45

[4] Vertical order in stacked layers of self-assembled In(Ga)As quantum rings on GaAs (001) -: art. no. 071918 [J].

Granados, D ;

García, JM ;

Ben, T ;

Molina, SI .

APPLIED PHYSICS LETTERS, 2005, 86 (07) :1-3

[5]

HERMAN MA, 1989, MOL BEAM EPITAXY FUN, P32

[6] Kondo effect in a few-electron quantum ring -: art. no. 196601 [J].

Keyser, UF ;

Fühner, C ;

Borck, S ;

Haug, RJ ;

Bichler, M ;

Abstreiter, G ;

Wegscheider, W .

PHYSICAL REVIEW LETTERS, 2003, 90 (19) :4

[7] Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system [J].

Keyser, UF ;

Schumacher, HW ;

Zeitler, U ;

Haug, RJ ;

Eberl, K .

APPLIED PHYSICS LETTERS, 2000, 76 (04) :457-459

[8] Near room temperature droplet epitaxy for fabrication of InAs quantum dots [J].

Kim, JS ;

Koguchi, N .

APPLIED PHYSICS LETTERS, 2004, 85 (24) :5893-5895

[9] NEW MBE GROWTH METHOD FOR INSB QUANTUM-WELL BOXES [J].

KOGUCHI, N ;

TAKAHASHI, S ;

CHIKYOW, T .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :688-692

[10] Growth of InAs nanocrystals on GaAs(100) by droplet epitaxy [J].

Lee, JM ;

Kim, DH ;

Hong, H ;

Woo, JC ;

Park, SJ .

JOURNAL OF CRYSTAL GROWTH, 2000, 212 (1-2) :67-73

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