Finite element simulation of package stress in transfer molded MEMS pressure sensors

被引:46
作者
Krondorfer, R
Kim, YK
Kim, J
Gustafson, CG
Lommasson, TC
机构
[1] SensoNor Asa, N-3192 Horten, Norway
[2] Samsung Techwin Co Ltd, Kyonggi Do 449712, South Korea
[3] Norwegian Univ Sci & Technol, N-7491 Trondheim, Norway
关键词
D O I
10.1016/j.microrel.2004.05.020
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The goal of this paper is to investigate the effect of residual packaging stress resulting from transfer molding of a micro electro mechanical system pressure sensor. A model of a silicon diaphragm micro electro mechanical system pressure sensor geometry was used to simulate the stresses developed during the molding process. The analyses were carried out with an assumption that the epoxy molding compound was a temperature dependent elastic material. Finite element analysis was used to calculate the residual packaging stress. The stress values were used to obtain the electrical output signal and sensitivity of the packaged sensor. In this way, a direct link was established between package stress and device performance. The calculated output signal and sensitivity were compared with experimental data to verify the simulated stress and hence determine the effect of the packaging process on the pressure sensor. Four different service temperatures were considered to examine the temperature effects on the output signal and the sensitivity for the packaged sensor. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1995 / 2002
页数:8
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