The role of hole leakage in 1300-nm InGaAsN quantum-well lasers

被引：64

作者：

Tansu, N ^{[1
]}

Mawst, LJ ^{[1
]}

机构：

[1] Univ Wisconsin, Reed Ctr Photon, Dept Elect Comp Engn, Madison, WI 53706 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 10期

关键词：

D O I：

10.1063/1.1558218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We calculate the thermionic escape times of electrons and holes in InGaAsN and InGaAs quantum wells using the most recent input data. The short thermionic escape time of holes from the InGaAsN quantum well indicates that hole leakage may be a significant factor in the poorer temperature characteristics of InGaAsN quantum-well lasers compared to those of InGaAs devices. We suggest a structure that results in an increased escape time, which will allow the reduction of hole leakage in these devices. (C) 2003 American Institute of Physics.

引用

页码：1500 / 1502

页数：3

共 23 条

[1] Laser gain and threshold properties in compressive-strained and lattice-matched GaInNAs/GaAs quantum wells [J].

Chow, WW ;

Jones, ED ;

Modine, NA ;

Allerman, AA ;

Kurtz, SR .

APPLIED PHYSICS LETTERS, 1999, 75 (19) :2891-2893

[2]

CHUANG SL, 1995, PHYSICS OPTOELECTRON

[3]

COLEMAN JJ, 1993, QUANTUM WELL LASERS, pCH8

[4] A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers [J].

Fehse, R ;

Tomic, S ;

Adams, AR ;

Sweeney, SJ ;

O'Reilly, EP ;

Andreev, A ;

Riechert, H .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :801-810

[5] Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 μm [J].

Ha, W ;

Gambin, V ;

Wistey, M ;

Bank, S ;

Kim, S ;

Harris, JS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (05) :591-593

[6] Photoreflectance spectroscopy of strained (In)GaAsN/GaAs multiple quantum wells [J].

Héroux, JB ;

Yang, X ;

Wang, WI .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) :4361-4366

[7] Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content [J].

Hetterich, M ;

Dawson, MD ;

Egorov, AY ;

Bernklau, D ;

Riechert, H .

APPLIED PHYSICS LETTERS, 2000, 76 (08) :1030-1032

[8] Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm [J].

Höhnsdorf, F ;

Koch, J ;

Leu, S ;

Stolz, W ;

Borchert, B ;

Druminski, M .

ELECTRONICS LETTERS, 1999, 35 (07) :571-572

[9] Improved theory for carrier leakage and diffusion in multiquantum-well semiconductor lasers [J].

Irikawa, M ;

Ishikawa, T ;

Fukushima, T ;

Shimizu, H ;

Kasukawa, A ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (4A) :1730-1737

[10] VALENCE-BAND OFFSET IN STRAINED GAAS-INXGA1-XAS SUPERLATTICES [J].

JOGAI, B .

APPLIED PHYSICS LETTERS, 1991, 59 (11) :1329-1331

← 1 2 3 →