Status and future of x-ray lithography

被引:10
作者
Hector, S [1 ]
机构
[1] Motorola Inc, Adv Prod Res & Dev Lab, Austin, TX 78721 USA
关键词
D O I
10.1016/S0167-9317(98)00007-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
X-ray lithography is relatively mature, and may be used to manufacture complex integrated circuits at 130 nm ground rules and smaller. Overlay and critical dimension control for 180 nm ground rules have been demonstrated with synchrotron-based x-ray lithography. Significant engineering challenges remain in making x-ray masks for 180 nm and smaller ground rules. Extendibility of x-ray lithography to 100 nm ground rules and below will require less than or equal to 20 mu m gaps and careful mask bias optimization.
引用
收藏
页码:25 / 30
页数:6
相关论文
共 30 条
[11]  
Early K., 1990, Microelectronic Engineering, V11, P317, DOI 10.1016/0167-9317(90)90122-A
[12]   SIMULTANEOUS-OPTIMIZATION OF SPECTRUM, SPATIAL COHERENCE, GAP, FEATURE BIAS, AND ABSORBER THICKNESS IN SYNCHROTRON-BASED X-RAY-LITHOGRAPHY [J].
HECTOR, SD ;
SMITH, HI ;
SCHATTENBURG, ML .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2981-2985
[13]  
HECTOR SD, 1997, JVST B, V15
[14]  
KIKUCHI Y, 1997, IN PRESS JJAP
[15]   X-ray mask fabrication advancement at the Microlithographic Mask Development Center [J].
Kimmel, KR ;
Hughes, PJ .
ELECTRON-BEAM, X-RAY, EUV, AND ION-BEAM SUBMICROMETER LITHOGRAPHIES FOR MANUFACTURING VI, 1996, 2723 :190-197
[16]  
Krasnoperova A.A., 1997, J VAC SCI TECHNOL B, V10, P613, DOI [10.2494/photopolymer.10.613, DOI 10.2494/PHOTOPOLYMER.10.613]
[17]  
LEAVEY J, COMMUNICATION
[18]  
Nishioka Y, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P903, DOI 10.1109/IEDM.1995.499362
[19]   Trench isolation at 300 nm active pitch using x-ray lithography [J].
Perera, AH ;
Thompson, M ;
Hector, S ;
Iyer, S ;
Azrak, MJ ;
Zavala, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :4314-4317
[20]   OVERLAY ENHANCEMENT WITH PRODUCT-SPECIFIC EMULATION IN ELECTRON-BEAM LITHOGRAPHY TOOLS [J].
PUISTO, D ;
STURANS, M ;
LAWLISS, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06) :3436-3439