共 70 条
Synthesis, Structures, and Properties of Fused Thiophenes for Organic Field-Effect Transistors
被引:66
作者:
Liu, Ying
[1
,2
]
Di, Chong-an
[1
]
Du, Chunyan
[1
,2
]
Liu, Yunqi
[1
]
Lu, Kun
[1
,2
]
Qiu, Wenfeng
[1
]
Yu, Gui
[1
]
机构:
[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
基金:
中国国家自然科学基金;
关键词:
device performance;
organic field-effect transistors;
semiconductors;
sulfur heterocycles;
THIN-FILM TRANSISTORS;
HIGH-PERFORMANCE;
HIGH-MOBILITY;
PHOTOPHYSICAL PROPERTIES;
MOLECULAR-STRUCTURE;
CHAIN-LENGTH;
RING FUSION;
CRYSTAL;
SEMICONDUCTOR;
PENTACENE;
D O I:
10.1002/chem.200902755
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
A series of fused thiophenes composed of fused alpha-oligothiophene units as building blocks, end-capped with either styrene or 1-pentyl-4-vinyl-benzene groups, has been synthesized through Stille coupling reactions. The compounds have been fully characterized by means of H-1 NMR spectrometry, high-resolution mass spectrometry, and elemental analysis. The molecules present a trans-trans configuration between their double bonds, which has been verified and confirmed by Fourier-transform infrared spectroscopy and single-crystal X-ray diffraction analysis. The X-ray crystal structures showed pi-pi overlap and sulfur-sulfur interactions between the adjacent molecules. The decomposition temperatures were all found to be above 300 degrees C, indicating that compounds of this series possess excellent thermal stability. The fact that no phase transition Occurs at low temperature indicates that they should be well-suited for application in devices. Moreover, they possess low HOMO energy levels, based on cyclic voltammetry measurements, and suitable energy gaps, as determined from their thin-film UV/Vis spectra. Thin-film X-ray diffraction analysis and atomic force microscopy revealed high crystallinity on supporting substrates. In addition, as the substrate temperature has a significant influence on the morphology and the degree of crystallinity, the device performance could be optimized by varying the substrate temperature. These materials were found to exhibit optimal field-effect performance, with a mobility of 0.17 cm(2)V(-1)s(-1) and an on/off ratio of 10(5), at a substrate temperature of 70 degrees C.
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页码:2231 / 2239
页数:9
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