Hysteresis, switching, and negative differential resistance in molecular junctions: A polaron model

被引：285

作者：

Galperin, M

Ratner, MA

Nitzan, A

机构：

[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[2] Northwestern Univ, Nanotechnol Ctr, Evanston, IL 60208 USA

[3] Tel Aviv Univ, Sackler Fac Sci, Sch Chem, IL-69978 Tel Aviv, Israel

来源：

NANO LETTERS | 2005年 / 5卷 / 01期

关键词：

D O I：

10.1021/nl048216c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Within a simple mean-field model (self-consistent Hartree approximation) we discuss the possibility of polaron formation on a molecular wire as a mechanism for negative differential resistance (NDR), switching, and/or hysteresis in the I-V characteristic of molecular junctions. This mechanism differs from earlier proposed mechanisms of charging and conformational change. The polaron model captures the essential physics and provides qualitative correspondence with experimental data. The importance of active redox centers in the molecule is indicated.

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页码：125 / 130

页数：6

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