Electronic memory effects in self-assembled monolayer systems

被引：35

作者：

Chen, J

Su, J

Wang, W

Reed, MA

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[3] Yale Univ, Dept Phys, New Haven, CT 06520 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2003年 / 16卷 / 01期

关键词：

self-assembled monolayer; molecular transport;

D O I：

10.1016/S1386-9477(02)00577-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report stable and reproducible switching and memory effects in Self-Assembled Monolayers (SAMs). We demonstrate realization of negative differential resistance (NDR) and charge storage in electronic devices that utilize single redox-center- contained SAM as the active component: and compare the effects of various redox centers to switching and storage behavior, The devices exhibit electronically programmable and erasable memory bits with bit retention times greater than 15 min at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：17 / 23

页数：7

共 8 条

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