P-N DOUBLE-QUANTUM-WELL RESONANT INTERBAND TUNNELING DIODE WITH PEAK-TO-VALLEY CURRENT RATIO OF 144 AT ROOM-TEMPERATURE

被引：44

作者：

TSAI, HH ^{[1
]}

SU, YK ^{[1
]}

LIN, HH ^{[1
]}

WANG, RL ^{[1
]}

LEE, TL ^{[1
]}

机构：

[1] NATL TAIWAN UNIV,DEPT ELECT ENGN,TAIPEI,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 09期

关键词：

D O I：

10.1109/55.311133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The current-voltage characteristics of the p-n double quantum well resonant interband tunneling (RIT) diodes in InAlAs/InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 angstrom to 30 A on the device characteristics is also studied.

引用

页码：357 / 359

页数：3

共 14 条

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