RESONANT INTERBAND TUNNELING DEVICE WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE REGIONS

被引：15

作者：

BERESFORD, R ^{[1
]}

LUO, LF ^{[1
]}

LONGENBACH, KF ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 03期

关键词：

D O I：

10.1109/55.46950

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first observations of multiple negative differential resistance (NDR) regions in resonant interband tunneling devices. In vertically integrated poly-type heterostructures of InAs/AISb/GaSb, the peak voltages are reduced by a factor of 2 compared to the Alln-As/GalnAs material system, while high peak-to-valley ratios of 4:1 (17:1) at 300 K (77 K) are maintained. © 1990 IEEE

引用

页码：110 / 112

页数：3

共 8 条

[1] RESONANT TUNNELING DEVICES WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE AND DEMONSTRATION OF A 3-STATE MEMORY CELL FOR MULTIPLE-VALUED LOGIC APPLICATIONS
CAPASSO, F
SEN, S
CHO, AY
SIVCO, D
[J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 297 - 299
[2] HURST SL, 1988, 18TH P INT S MULT VA, P164
[3] COMBINING RESONANT TUNNELING DIODES FOR SIGNAL-PROCESSING AND MULTILEVEL LOGIC
LAKHANI, AA
POTTER, RC
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (20) : 1684 - 1685
[4] INTERBAND TUNNELING IN POLYTYPE GASB/ALSB/INAS HETEROSTRUCTURES
LUO, LF
BERESFORD, R
WANG, WI
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (19) : 2023 - 2025
[5] HETEROJUNCTION FIELD-EFFECT TRANSISTORS BASED ON ALGASB/INAS
LUO, LF
BERESFORD, R
WANG, WI
MUNEKATA, H
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (08) : 789 - 791
[6] RESONANT TUNNELING DEVICE WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE - DIGITAL AND SIGNAL-PROCESSING APPLICATIONS WITH REDUCED CIRCUIT COMPLEXITY
SEN, S
CAPASSO, F
CHO, AY
SIVCO, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) : 2185 - 2191
[7] A TRIPLE-WELL RESONANT-TUNNELING DIODE FOR MULTIPLE-VALUED LOGIC APPLICATION
TANOUE, T
MIZUTA, H
TAKAHASHI, S
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) : 365 - 367
[8] TSUCHIYA M, 1985, JPN J APPL PHYS, V24, pL464

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